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1. Field of the Invention
The present invention relates to a method of dry etching a resist pattern, and a resist film dry etching method, and more particularly, to a method of dry etching a resist film which reduces etching damage and is suitable for fine processing, and a resist film dry etching method.
2. Description of the Background Art
Due to high integration of various kinds of LSIs (Large Scale Integration), fine processing technology has had an important role for 6add127376 daltera
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